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Publications research group Eickhoff
2024
Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interface M. Schowalter, A. Karg, M. Alonso-Orts, J. A. Bich, S. Raghuvansy, M. S. Williams, F. F. Krause, T. Grieb, C. Mahr, T. Mehrtens, P. Vogt, A. Rosenauer, M. Eickhoff APL Materials 12, 091104 (2024)
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Accurate and Robust Wide-Range Luminescent Microthermometer Based on ALD-Encapsulated Ga2O3:Cr DBR Microcavities Manuel Alonso-Orts, Ruben J. T. Neelissen, Daniel Carrasco, Marco Schowalter, Andreas Rosenauer, Emilio Nogales, Bianchi Méndez, Martin Eickhoff Advanced Materials Technologies 2400881 (2024)
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Electrochemical Detection of Selective Anion Transport through Subnanopores in Liquid-Crystalline Water Treatment Membranes Sven Mehlhose, Takeshi Sakamoto, Martin Eickhoff, Takashi Kato, and Motomu Tanaka Journal of Physical Chemistry B 128, 4537 (2024)
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Atomic vs. sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS2 and WS2 Christian Tessarek, Tim Grieb, Florian F. Krause, Christian Petersen, Alexander Karg, Alexander Hinz, Niels Osterloh, Christian Habben, Stephan Figge, Jon-Olaf Krisponeit, Thomas Schmidt, Jens Falta, Andreas Rosenauer, Martin Eickhoff 2D Materials 11, 025031 (2024)
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Erratum: Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Patrick Vogt APL Materials 12, 019902 (2024)
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Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy Martin S. Williams, Manuel Alonso-Orts, Marco Schowalter, Alexander Karg, Sushma Raghuvansy, Jon P. McCandless, Debdeep Jena, Andreas Rosenauer, Martin Eickhoff, Patrick Vogt APL Materials 12, 011120 (2024)
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2023
Growth and characterization of sputter-deposited Ga2O3-based memristive devices Aman Baunthiyal, Jon-Olaf Krisponeit, Marco Schowalter, Thorsten Mehrtens, Alexander Karg, Andreas Rosenauer, Martin Eickhoff, Jens Falta Applied Physics Letters 123, 213504 (2023)
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Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt APL Materials 11, 111113 (2023)
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Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy Alexander Karg, Alexander Hinz, Stephan Figge, Marco Schowalter, Patrick Vogt, Andreas Rosenauer, Martin Eickhoff APL Mater. 11, 091114 (2023)
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Biotic and Abiotic Interactions in Freshwater Mesocosms Determine Fate and Toxicity of CuO Nanoparticles Tonya Gräf, Viviane Koch, Jan Köser, Jonas Fischer, Christian Tessarek, and Juliane Filser Environmental Science & Technology 57, 12376 (2023)
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Nucleation window of Ga2O3 and In2O3 for Molecular Beam Epitaxy on (0001) Al2O3 Alexander Karg, Justin Andreas Bich, Adrian Messow, Marco Schowalter, Stephan Figge, Andreas Rosenauer, Patrick Vogt, Martin Eickhoff Crystal Growth & Design 23, 4435 (2023)
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Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices Manuel Alonso-Orts, Rudolfo Hötzel, Tim Grieb, Matthias Auf der Maur, Maximilian Ries, Felix Nippert, Benjamin März, Knut Müller-Caspary, Markus R. Wagner, Andreas Rosenauer, Martin Eickhoff Discover Nano 18, 27 (2023) DOI: 10.1186/s11671-023-03808-6
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Growth of alpha-Ga2O3 on alpha-Al2O3 by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy J. P. McCandless, D. Rowe, N. Pieczulewski, V. Protasenko, M. Alonso-Orts, M. S. Williams, M. Eickhoff, H. G. Xing, D. A. Muller, D. Jena, P. Vogt Japanese Journal of Applied Physics 62, SF1013 (2023) DOI: 10.35848/1347-4065/acbe04
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Temperature-Dependent Anisotropic Refractive Index in β-Ga2O3: Application in Interferometric Thermometers Daniel Carrasco, Eva Nieto-Pinero, Manuel Alonso-Orts, Rosalía Serna, Jose M. San Juan , María L. Nó, Jani Jesenovec, John S. McCloy, Emilio Nogales, Bianchi Méndez Nanomaterials 13, 1126 (2023)
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Origin of the spectral red-shift and polarization pattersn of self-assembled InGaN nanostructures on GaN nanowires Maximilian Ries, Felix Nippert, Benjamin März, Manuel Alonso-Orts, Tim Grieb, Rudolfo Hötzel, Pascal Hille, Pouria Emtenani, Eser Metin Akinoglu, Eugen Speiser, Julian Plaickner, Jörg Schörmann, Matthias Auf der Maur, Knut Müller-Caspary, Andreas Rosenauer, Norbert Esser, Martin Eickhoff, Markus R. Wagner Nanoscale 15, 7077 (2023)
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2022
Detection of Hydrogen Dissolved in Liquid Media: A Review and Outlook Alejandra Castro-Carranza, Pablo Vega-Hernandez, Jairo C. Nolasco, Anette Ladstätter-Weißenmayer, Martin Eickhoff, Jürgen Gutowski Physica Status Solidi A 219, 2100669 (2022)
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Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer A. Karg, M. Kracht, P. Vogt, A. Messow, N. Braud, J. Schörmann, M. Rohnke, J. Janek, J. Falta, M. Eickhoff Journal of Applied Physics 132, 195304 (2022)
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Controlled Si doping of β-Ga2O3 by molecular beam epitaxy J. P. McCandless, V. Protasenko, B. W. Morell, E. Steinbrunner, A. T. Neal, N. Tanen, Y. Cho, T. J. Asel, S. Mou, P. Vogt, H. G. Xing, D. Jena Appl. Phys. Lett. 121, 072108 (2022)
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Ga2O3 microwires as wide dynamical range temperature sensors Manuel Alonso-Orts, Daniel Carrasco, José M. San Juan, María L. Nó, Alicia de Andrés, Emilio Nogales, Bianchi Méndez Proceedings SPIE 12002, Oxide-based Materials and Devices XIII, 120020A (5 March 2022)
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Streched lignin/polycrylonitrile blended crbon nanofiber as high conductive electrode in electric double layer capacitor Manish Kumar, Shogo Taira, Nutthira Pakkang, Kengo Shigetomi, Yasumitsu Uraki Advances in Natural Sciences: Nanoscience and Nanotechnology 13, 025007 (2022)
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2021
4D-STEM at interfaces to GaN: Centre-of-mass approach & NBED-disc detection Tim Grieb, Florian F. Krause, Knut Müller-Caspary, Robert Ritz, Martin Simson, Jörg Schörmann, Christoph Mahr, Jan Müßener, Marco Schowalter, Heike Soltau, Martin Eickhoff, Andreas Rosenauer Ultramicroscopy 228, 113321 (2021) DOI: 10.1016/j.ultramic.2021.113321
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Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors Lorenzo Rigutti, Enrico Di Russo, Florian Chabanais, Ivan Blum, Jonathan Houard, Noëlle Gogneau, Ludovic Largeau, Alexander Karg, Martin Eickhoff, Williams Lefebvre, François Vurpillot
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Behavior of the ε-Ga2O3:Sn Evaporation During Laser-Assisted Atom Probe Tomography Florian Chabanais, Enrico Di Russo, Alexander Karg, Martin Eickhoff, Williams Lefebvre, Lorenzo Rigutti Microscopy and Microanalysis 27, 687 (2021) DOI: 10.1017/S1431927621000544
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Free-Standing ZnSe-Based Microdisk Resonators - Influence of Edge Roughness on the Optical Quality and Reducing Degradation with Supported Geometry Wilken Seemann, Alexander Kothe, Christian Tessarek, Gesa Schmidt, Siqi Qiao, Nils von den Driesch, Jan Wiersig, Alexander Pawlis, Gordon Callsen, Jürgen Gutowski Physica Status Solidi B, 2100249 (2021)
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Excitons Bound to Defect States in Two-dimensional (2D) MoS2 Oleg Gridenco, Kathrin Sebald, Christian Tessarek, Sven Mehrkens, Martin Eickhoff, Jürgen Gutowski IEEE Transactions on Nanotechnology 20, 400 (2021) DOI: 10.1109/TNANO.2021.3076574
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Ion compositions in artificial media control the impact of humic acid on colloidal behaviour, dissolution and speciation of CuO-NP Jonas Fischer, Tonya Gräf, Yvonne Sakka, Christian Tessarek, Jan Köser Science of The Total Environment 785, 147241 (2021) DOI: 10.1016/j.scitotenv.2021.147241
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Comparing co‐catalytic effects of ZrOx, SmOx, and Pt on COx methanation over Co‐based catalysts prepared by double flame spray pyrolysis Jakob Stahl, Jan Ilsemann, Suman Pokhrel, Marco Schowalter, Christian Tessarek, Andreas Rosenauer, Martin Eickhoff, Marcus Bäumer, Lutz Mädler ChemCatChem 13, 2815 (2021)
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Near-UV optical cavities in Ga2O3 nanowires Manuel Alonso-Orts, Gerwin Chilla, Rudolfo Hötzel, Emilio Nogales, Jose M. San Juan, Maria L. No, Martin Eickhoff, Bianchi Mendez Optics Letters 46, 278 (2021)
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2020
Influence of Polymorphism on the Electronic Structure of Ga2O3 Jack E. N. Swallow, Christian Vorwerk, Piero Mazzolini, Patrick Vogt, Oliver Bierwagen, Alexander Karg, Martin Eickhoff, Jörg Schörmann, Markus R. Wagner, Joseph W. Roberts, Paul R. Chalker, Matthew J. Smiles, Philip Murgatroyd, Sara A. Razek, Zachary W. Lebens-Higgins, Louis F. J. Piper, Leanne A. H. Jones, Pardeep K. Thakur, Tien-Lin Lee, Joel B. Varley, Jürgen Furthmüller, Claudia Draxl, Tim D. Veal, Anna Regoutz Chemistry of Materials 32, 8460, (2020) DOI: 10.1021/acs.chemmater.0c02465
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Chapter Eight - Luminescence probing of surface adsorption processes using InGaN/GaN nanowire heterostructure arrays Konrad Maier, Andreas Helwig, Gerhard Müller, Martin Eickhoff Semiconductor Gas Sensors (Second Edition), Woodhead Publishing, 2020, Pages 239-270, ISBN 9780081025598 DOI: 10.1016/B978-0-08-102559-8.00008-2
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Controlled Laser-Thinning of MoS2 Nanolayers and Transformation to Amorphous MoOx for 2D Monolayer Fabrication Christian Tessarek, Oleg Gridenco, Martin Wiesing, Jan Müßener, Stephan Figge, Kathrin Sebald, Jürgen Gutowski, Martin Eickhoff ACS Applied Nano Materials 4, 7490 (2020)
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Rare Earth-Doped Y4Al2O9 Nanoparticles for Stable Light-Converting Phosphors Chenyang Liu, Suman Pokhrel, Christian Tessarek, Haipeng Li, Marco Schowalter, Andreas Rosenauer, Martin Eickhoff, Lutz Mädler ACS Applied Nano Materials 3, 699 (2020)
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2019
Consistent description of mesoscopic transport: Case study of current-dependent magnetoconductance in single GaN:Ge nanowires Physical Review B 100, 085409 (2019) DOI: 10.1103/PhysRevB.100.085409
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The Role of Polarity in Nonplanar Semiconductor Nanostructures María de la Mata, Reza R. Zamani, Sara Martí-Sánchez, Martin Eickhoff, Qihua Xiong, Anna Fontcuberta i Morral, Philippe Caroff, Jordi Arbiol Nano Letters 19, 3396 (2019) DOI: 10.1021/acs.nanolett.9b00459
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Electrical Polarization in AlN/GaN Nanodisks Measured by Momentum-Resolved 4D Scanning Transmission Electron Microscopy Physical Review Letters 122, 106102 (2019) DOI: 10.1103/PhysRevLett.122.106102
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2018
Photoluminescence Detection of Surface Oxidation Processes on InGaN/GaN Nanowire Arrays Konrad Maier, Andreas Helwig, Gerhard Müller, Jörg Schörmann, Martin Eickhoff ACS Sensors 3, 2254 (2018) DOI: 10.1021/acssensors.8b0041
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Influence of the atom source operating parameters on the structural and optical properties of InxGa1−xN nanowires grown by plasma-assisted molecular beam epitaxy P. Hille, F. Walther, P. Klement, J. Müßener, J. Schörmann, J. Kaupe, S. Mitić, N. W. Rosemann, S. Chatterjee, A. Beyer, K. I. Gries, K. Volz, M. Eickhoff Journal of Applied Physics 124, 165703 (2018)
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Optical Analysis of Oxygen Self‐Diffusion in Ultrathin CeO2 Layers at Low Temperatures Paula Neuderth, Pascal Hille, Sara Martí‐Sánchez, María de la Mata, Mariona Coll, Jordi Arbiol, Martin Eickhoff Advanced Energy Materials 8, 1802120 (2018)
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Effects of the Fermi level energy on the adsorption of O-2 to monolayer MoS2 Philip Klement, Christina Steinke, Sangam Chatterjee, Tim O. Wehling, Martin Eickhoff 2D Materials 5, 045025 (2018)
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Dynamic Extracellular Imaging of Biochemical Cell Activity Using InGaN/GaN Nanowire Arrays as Nanophotonic Probes Sara Hölzel, Mikhail V. Zyuzin, Jens Wallys, Ervice Pouokam, Jan Müßener, Pascal Hille, Martin Diener, Wolfgang J. Parak, Martin Eickhoff Advanced Functional Materials 28, 1802503 (2018)
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Anisotropic Optical Properties of Metastable (01(1)over-bar2) α-Ga2O3 Grown by Plasma-Assisted Molecular Beam Epitaxy M. Kracht, A. Karg, M. Feneberg, J. Bläsing, J. Schörmann, R. Goldhahn, M. Eickhoff Physical Review Applied 10, 024047 (2018) DOI: 10.1103/PhysRevApplied.10.024047
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Suppression of the quantum-confined Stark effect in polar nitride heterostructures S. Schlichting, G. M. O. Hönig, J. Müßener, P. Hille, T. Grieb, S. Westerkamp, J. Teubert, J. Schörmann, M. R. Wagner, A. Rosenauer, M. Eickhoff, A. Hoffmann, G. Callsen Communications Physics 1, 48 (2018) DOI: 10.1038/s42005-018-0044-1
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Ion sensitive AlGaN/GaN field-effect transistors with monolithically integrated wheatstone bridge for temperature- and drift compensation in enzymatic biosensors Daniel Stock, Gesche Mareike Müntze, Stephan Figge, Martin Eickhoff Sensors and Actuators B: Chemical 263, 20 (2018) DOI: 10.1016/j.snb.2018.02.068
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Photoelectrochemical response of GaN, InGaN, and GaNP nanowire ensembles Jan M. Philipps, Sara Hölzel, Pascal Hille, Jörg Schörmann, Sangam Chatterjee, Irina A. Buyanova, Martin Eickhoff, Detlev M. Hofmann Journal of Applied Physics 123, 175703 (2018)
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Optical emission of GaN/AlN quantum-wires – the role of charge transfer from a nanowire template Jan Müßener, Ludwig A. Th. Greif, Stefan Kalinowski, Gordon Callsen, Pascal Hille, Jörg Schörmann, Markus R. Wagner, Andrei Schliwa, Sara Martí-Sánchez, Jordi Arbiol, Axel Hoffmann, Martin Eickhoff Nanoscale 10, 5591 (2018)
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Synthesis of SnO2 Nanowires Using SnI2 as Precursor and Their Application as High‐Performance Self‐Powered Ultraviolet Photodetectors Jie Jiang, Florian Heck, Detlev M. Hofmann, Martin Eickhoff Physica Status Solidi B 255, 1700426 (2018)
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Passivation layers for nanostructured photoanodes: ultra-thin oxides on InGaN nanowires P. Neuderth, P. Hille, J. Schörmann, A. Frank, C. Reitz, S. Martí-Sánchez, M. de la Mata, M. Coll, J. Arbiol, R. Marschall, M. Eickhoff Journal of Materials Chemistry A 6, 565 (2018)
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Flexible Modulation of Electronic Band Structures of Wide Band Gap GaN Semiconductors Using Bioinspired, Nonbiological Helical Peptides Sven Mehlhose, Nataliya Frenkel, Hirotaka Uji, Sara Hölzel, Gesche Müntze, Daniel Stock, Silvio Neugebauer, Armin Dadgar, Wasim Abuillan, Martin Eickhoff, Shunsaku Kimura, Motomu Tanaka Advanced Functional Materials 28, 1704034 (2018)
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2017
Evidence for nitrogen-related deep acceptor states in SnO2 grown by chemical vapor deposition Jie Jiang, Lars Ostheim, Matthias Kleine-Boymann, Detlev M. Hofmann, Peter J. Klar, Martin Eickhoff Journal of Applied Physics 122, 205702 (2017)
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Tin-Assisted Synthesis of ε−Ga2O3 by Molecular Beam Epitaxy Physical Review Applied 8, 054002 (2017) DOI: 10.1103/PhysRevApplied.8.054002
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Three dimensional reconstruction of InGaN nanodisks in GaN nanowires: Improvement of the nanowire sample preparation to avoid missing wedge effects Katharina Ines Gries, Julian Schlechtweg, Pascal Hille, Jörg Schörmann, Martin Eickhoff, Kerstin Volz Journal of Crystal Growth 475, 202 (2017) DOI: 10.1016/j.jcrysgro.2017.06.020
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Competitive adsorption of air constituents as observed on InGaN/GaN nano-optical probes Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Hille, Jörg Teubert, Martin Eickhoff Sensors and Actuators B: Chemical 250, 91 (2017) DOI: 10.1016/j.snb.2017.04.098
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Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures Jan Müßener, Pascal Hille, Tim Grieb, Jörg Schörmann, Jörg Teubert, Eva Monroy, Andreas Rosenauer, Martin Eickhoff ACS Nano 11, 8758 (2017)
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InGaN/GaN nanowires as a new platform for photoelectrochemical sensors – detection of NADH M. Riedel, S. Hölzel, P. Hille, J. Schörmann, M. Eickhoff, F. Lisdat Biosensors and Bioelectronics 94, 298 (2017) DOI: 10.1016/j.bios.2017.03.022
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Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors Maria Spies, Martien I. den Hertog , Pascal Hille, Jörg Schörmann, Jakub Polaczyński, Bruno Gayral, Martin Eickhoff, Eva Monroy, Jonas Lähnemann Nano Letters 17, 4231 (2017) DOI: 10.1021/acs.nanolett.7b01118
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Transport mechanisms in SnO2:N,H thin film grown by chemical vapor deposition Jie Jiang, Lars Ostheim, David Hartung, Yinmei Lu, Detlev M. Hofmann, Martin Eickhoff, Peter J. Klar Physica Status Solidi B 254, 1700003 (2017)
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Study of the carrier transfer across the GaNP nanowire electrolyte interface by electron paramagnetic spin trapping Jan M. Philipps, Jan E. Stehr, Detlev M. Hofmann, Irina A. Buyanova, Martin Eickhoff Applied Physics Letters 110, 222101 (2017)
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Influence of the cluster constituents’ reactivity on the desorption/ionization process induced by neutral SO2 clusters A. Portz, M. Baur, C. R. Gebhardt, A. J. Frank, P. Neuderth, M. Eickhoff, M. Dürr Journal of Chemical Physics 146, 134705 (2017)
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Photoluminescence Probing of Complex H2O Adsorption on InGaN/GaN Nanowires Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Hille, Jörg Teubert, Martin Eickhoff Nano Letters 17, 615 (2017) DOI: 10.1021/acs.nanolett.6b03299
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2016
Interfacial properties of self-assembled GaN nanowires on pre-processed Al2O3(0001) surfaces T. Koukoula, J. Kioseoglou,Th. Kehagias, F. Furtmayr, M. Eickhoff, H. Kirmse, Th. Karakostas, Ph. Komninou Materials Science in Semiconductor Processing 55, 46 (2016) DOI: 10.1016/j.mssp.2016.03.015
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Hydrogen induced mobility enhancement in RF sputtered Cu2O thin films K. P. Hering, C. Kandzia, J. Benz, B. G. Kramm, M. Eickhoff, P. J. Klar Journal of Applied Physics 120, 185705 (2016)
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Ge doping of GaN beyond the Mott transition A. Ajay, J. Schörmann, M. Jiménez-Rodriguez, C. B. Lim, F. Walther, M. Rohnke, I. Mouton, L. Amichi, C. Bougerol, M. I. Den Hertog, M. Eickhoff Journal of Physics D: Applied Physics 49, 445301 (2016) DOI: 10.1088/0022-3727/49/44/445301
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Luminescent properties of ZnO and ZnMgO epitaxial layers under high hydrostatic pressure A. Kaminska, A. Duzynska, M. Nowakowska, A. Suchocki, T. A. Wassner, B. Laumer, M. Eickhoff Journal of Alloys and Compounds 672, 125 (2016) DOI: 10.1016/j.jallcom.2016.02.128
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Shift of optical absorption edge in SnO2 films with high concentrations of nitrogen grown by chemical vapor deposition Jie Jiang, Yinmei Lu, Bruno K. Meyer, Detlev M. Hofmann, Martin Eickhoff Journal of Applied Physics 119, 245703 (2016)
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Nitrogen incorporation in SnO2 thin films grown by chemical vapor deposition Jie Jiang, Yinmei Lu, Benedikt Kramm, Fabian Michel, Christian T. Reindl, Max E. Kracht, Peter J. Klar, Bruno K. Meyer, Martin Eickhoff Physica Status Solidi B 253, 1087 (2016)
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Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures Caroline B. Lim, Mark Beeler, Akhil Ajay, Jonas Lähnemann, Edith Bellet-Amalric, Catherine Bougerol, Jörg Schörmann, Martin Eickhoff, Eva Monroy Japanese Journal of Applied Physics 55, 05FG05 (2016)
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UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices Jonas Lähnemann, Martien Den Hertog, Pascal Hille, Marı́a de la Mata, Thierry Fournier, Jörg Schörmann, Jordi Arbiol, Martin Eickhoff, Eva Monroy Nano Letters 16, 3260 (2016) DOI: 10.1021/acs.nanolett.6b00806
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Optical manipulation of a multilevel nuclear spin in ZnO: Master equation and experiment Physical Review B 93, 155204 (2016) DOI: 10.1103/PhysRevB.93.155204
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In situ monitoring of myenteric neuron activity using acetylcholinesterase-modified AlGaN/GaN solution-gate field-effect transistors Gesche Mareike Müntze, Ervice Pouokam, Julia Steidle, Wladimir Schäfer, Alexander Sasse, Kai Röth, Martin Diener, Martin Eickhoff Biosensors and Bioelectronics 77, 1048 (2016) DOI: 10.1016/j.bios.2015.10.076
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Plasma assisted molecular beam epitaxy of Cu2O on MgO(001): Influence of copper flux on epitaxial orientation M. Kracht, J. Schoermann, M. Eickhoff Journal of Crystal Growth 436, 87 (2016) DOI: 10.1016/j.jcrysgro.2015.11.041
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2015
Doping-induced universal conductance fluctuations in GaN nanowires Matthias T. Elm, Patrick Uredat, Jan Binder, Lars Ostheim, Markus Schäfer, Pascal Hille, Jan Müßener, Jörg Schörmann, Martin Eickhoff, Peter J. Klar Nano Letters 15, 7822 (2015) DOI: 10.1021/acs.nanolett.5b02332
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Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5-10 THz band C. B. Lim, A. Ajay, C. Bougerol, B. Haas, J. Schörmann, M. Beeler, J. Lähnemann, M. Eickhoff, E. Monroy Nanotechnology 26, 435201 (2015) DOI: 10.1088/0957-4484/26/43/435201
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Effect of water vapor and surface morphology on the low temperature response of metal oxide semiconductor gas sensors Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Hille, Martin Eickhoff Materials 8, 6570 (2015)
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Self-assembly of ordered wurtzite/rock salt heterostructures - A new view on phase separation in MgxZn1-xO K. I. Gries, T. A. Wassner, S. Vogel, J. Bruckbauer, I. Häusler, R. Straubinger, A. Beyer, A. Chernikov, B. Laumer, M. Kracht, C. Heiliger, J. Janek, S. Chatterjee, K. Volz, M. Eickhoff Journal of Applied Physics 118, 045706 (2015)
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Structural and electronic properties of GaN nanowires with embedded InxGa1-xN nanodisks J. Kioseoglou, Th. Pavloudis, Th. Kehagias, Ph. Komninou, Th. Karakostas, C. D. Latham, M. J. Rayson, P. R. Briddon, M. Eickhoff Journal of Applied Physics 118, 034301 (2015)
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Long-lived excitons in GaN/AlN nanowire heterostructures M. Beeler, C. B. Lim, P. Hille, J. Bleuse, J. Schörmann, M. de la Mata, J. Arbiol, M. Eickhoff, E. Monroy Physical Review B 91, 205440 (2015) DOI: 10.1103/PhysRevB.91.205440
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Electrical transport properties of Ge-doped GaN nanowires M. Schäfer, M. Günther, C. Länger, J. Müßener, M. Feneberg, P. Uredat, M. T. Elm, P. Hille, J. Schörmann, J. Teubert, T. Henning, P. J. Klar, M. Eickhoff Nanotechnology 26, 135704 (2015) DOI: 10.1088/0957-4484/26/13/135704
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Quantitative analysis of immobilized penicillinase using enzyme-modified AlGaN/GaN field-effect transistors Gesche Mareike Müntze, Barbara Baur, Wladimir Schäfer, Alexander Sasse, John Howgate, Kai Röth, Martin Eickhoff Biosensors and Bioelectronics 64, 605 (2015) DOI: 10.1016/j.bios.2014.09.062
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Integration of an opto-chemical detector based on group III-nitride nanowire heterostructures R. Kleindienst, P. Becker, V. Cimalla, A. Grewe, P. Hille, M. Krüger, J. Schörmann, U. T. Schwarz, J. Teubert, M. Eickhoff, S. Sinzinger Applied Optics 54, 839 (2015)
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2014
Probing the Internal Electric Field in GaN/AlGaN Nanowire Heterostructures Jan Müßener, Jörg Teubert, Pascal Hille, Markus Schäfer, Jörg Schörmann, Maria de la Mata, Jordi Arbiol, Martin Eickhoff Nano Letters 14, 5118 (2014)
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High Precision, Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models Nataliya Frenkel, Jens Wallys, Sara Lippert, Jörg Teubert, Stefan Kaufmann, Aparna Das, Eva Monroy, Martin Eickhoff, Motomu Tanaka Advanced Functional Materials 24, 4927 (2014)
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Detection of oxidising gases using an optochemical sensor system based on GaN/InGaN nanowires Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Becker, Pascal Hille, Jörg Schörmann, Jörg Teubert, Martin Eickhoff Sensors and Actuators B: Chemical 197, 87 (2014 ) DOI: 10.1016/j.snb.2014.02.002
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Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping P. Hille, J. Müßener, P. Becker, M. de la Mata, N. Rosemann, C. Magén, J. Arbiol, J. Teubert, S. Chatterjee, J. Schörmann, M. Eickhoff Applied Physics Letters 104, 102104 (2014)
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Intraband Absorption in Self-Assembled Ge-Doped GaN/AlN Nanowire Heterostructures M. Beeler†, P. Hille, J. Schörmann, J. Teubert, M. de la Mata, J. Arbiol, M. Eickhoff, E. Monroy Nano Letters 14, 1665 (2014)
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2013
Contactless electroreflectance studies of free exciton binding energy in Zn1-xMgxO epilayers M. Wełna, R. Kudrawiec, A. Kaminska, A. Kozanecki, B. Laumer, M. Eickhoff, J. Misiewicz Applied Physics Letters 103, 251908 (2013)
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Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires Th. Kehagias, G. P. Dimitrakopulos, P. Becker, J. Kioseoglou, F. Furtmayr, T. Koukoula, I. Häusler, A. Chernikov, S. Chatterjee, Th. Karakostas, H.-M. Solowan, U. T. Schwarz, M. Eickhoff, Ph. Komninou Nanotechnology 24, 435702 (2013) DOI: 10.1088/0957-4484/24/43/435702
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Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy Jörg Schörmann, Pascal Hille, Markus Schäfer, Jan Müßener, Pascal Becker, Peter J. Klar, Matthias Kleine-Boymann, Marcus Rohnke, Maria de la Mata, Jordi Arbiol, Detlev M. Hofmann, Jörg Teubert, Martin Eickhoff Journal of Applied Physics 114, 103505 (2013)
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InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface J. Teubert, S. Koslowski, S. Lippert, M. Schäfer, J. Wallys, G. Dimitrakopulos, Th. Kehagias, Ph. Komninou, A. Das, E. Monroy, M. Eickhoff Journal of Applied Physics 114, 074313 (2013)
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Radical formation at the gallium nitride nanowire-electrolyte interface by photoactivated charge transfer J. M. Philipps, G. M. Müntze, P. Hille, J. Wallys, J. Schörmann, J. Teubert, D. M. Hofmann, M. Eickhoff Nanotechnology 24, 325701 (2013) DOI: 10.1088/0957-4484/24/32/325701
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Accurate determination of optical bandgap and lattice parameters of Zn1-xMgxO epitaxial films (0 <= x <= 0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire Bernhard Laumer, Fabian Schuster, Martin Stutzmann, Andreas Bergmaier, Günther Dollinger, Martin Eickhoff Journal of Applied Physics 113, 233512 (2013)
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Bandgap engineering in a nanowire: self-assembled 0, 1 and 2D quantum structures Jordi Arbiol, Maria de la Mata, Martin Eickhoff, Anna Fontcuberta i Morral Materials Today 16, 213 (2013) DOI: 10.1016/j.mattod.2013.06.006
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Optical properties of GaN-based nanowires containing a single Al0.14Ga0.86N/GaN quantum disc G. Jacopin, L. Rigutti, J. Teubert, F. H. Julien, F. Furtmayr, Ph. Komninou, Th. Kehagias, M. Eickhoff, M. Tchernycheva Nanotechnology 24, 125201 (2013) DOI: 10.1088/0957-4484/24/12/125201
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Probing carrier populations in ZnO quantum wells by screening of the internal electric fields Physical Review B 87, 035309 (2013) DOI: 10.1103/PhysRevB.87.035309
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A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire Maria de la Mata, Xiang Zhou, Florian Furtmayr, Jörg Teubert, Silvija Gradečak, Martin Eickhoff, Anna Fontcuberta i Morral, Jordi Arbiol Journal of Materials Chemistry C 1, 4300 (2013)
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Effects of interface geometry on the thermoelectric properties of laterally microstructured ZnO-based thin films G. Homm, F. Gather, A. Kronenberger, S. Petznick, T. Henning, M. Eickhoff, B. K. Meyer, C. Heiliger, P. J. Klar Physica Status Solidi A 210, 119 (2013)
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2012
Bias-Enhanced Optical pH Response of Group III-Nitride Nanowires Jens Wallys, Jörg Teubert, Florian Furtmayr, Detlev M. Hofmann, Martin Eickhoff Nano Letters 12, 6180 (2012)
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Opto-chemical sensor system for the detection of H-2 and hydrocarbons based on InGaN/GaN nanowires Sumit Paul, Andreas Helwig, Gerhard Müller, Florian Furtmayr, Jörg Teubert, Martin Eickhoff Sensors and Actuators B - Chemical 173, 120 (2012) DOI: 10.1016/j.snb.2012.06.022
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Growth study of nonpolar Zn1-xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy Bernhard Laumer, Fabian Schuster, Martin Stutzmann, Andreas Bergmaier, Günther Dollinger, Stephen Vogel, Katharina I. Gries, Kerstin Volz, Martin Eickhoff Applied Physics Letters 101, 122106 (2012)
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Binary copper oxide semiconductors: From materials towards devices B. K. Meyer, A. Polity, D. Reppin, M. Becker, P. Hering, P. J. Klar, Th. Sander, C. Reindl, J. Benz, M. Eickhoff, C. Heiliger, M. Heinemann, J. Bläsing, A. Krost, S. Shokovets, C. Müller, C. Ronning Physica Status Solidi B 249, 1487 (2012)
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ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers Bernhard Laumer, Fabian Schuster, Thomas A. Wassner, Martin Stutzmann, Marcus Rohnke, Jörg Schörmann, Martin Eickhoff Journal of Applied Physics 111, 113504 (2012)
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Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis Maria de la Mata, Cesar Magen, Jaume Gazquez, Muhammad Iqbal Bakti Utama, Martin Heiss, Sergei Lopatin, Florian Furtmayr, Carlos J. Fernández-Rojas, Bo Peng, Joan Ramon Morante, Riccardo Rurali, Martin Eickhoff, Anna Fontcuberta i Morral, Qihua Xiong, Jordi Arbiol Nano Letters 12, 2579 (2012)
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Electrochemical properties of GaN nanowire electrodes-influence of doping and control by external bias J. Wallys, S. Hoffmann, F. Furtmayr, J. Teubert, M. Eickhoff Nanotechnology 23, 165701 (2012) DOI: 10.1088/0957-4484/23/16/165701
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Phonon-assisted luminescence of polar semiconductors: Frohlich coupling versus deformation-potential scattering Physical Review B 85, 035201 (2012) DOI: 10.1103/PhysRevB.85.035201
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Self-assembled GaN quantum wires on GaN/AlN nanowire templates Jordi Arbiol, Cesar Magen, Pascal Becker, Gwénolé Jacopin, Alexey Chernikov, Sören Schäfer, Florian Furtmayr, Maria Tchernycheva, Lorenzo Rigutti, Jörg Teubert, Sangam Chatterjee, Joan R. Morante, Martin Eickhoff Nanoscale 4, 7517 (2012)
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2011
Intra-excitonic relaxation dynamics in ZnO Alexej Chernikov, Martin Koch, Bernhard Laumer, Thomas A. Wassner, Martin Eickhoff, Stephan W. Koch, Sangam Chatterjee Applied Physics Letters 99, 231910 (2011)
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Carrier confinement in GaN/AlxGa1−xN nanowire heterostructures (0<x≤ 1) Physical Review B 84, 205303 (2011) DOI: 10.1103/PhysRevB.84.205303
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Exciton confinement in homo- and heteroepitaxial ZnO/Zn1 − xMgxO quantum wells with x < 0.1 Bernhard Laumer, Thomas A. Wassner, Fabian Schuster, Martin Stutzmann, Jörg Schörmann, Marcus Rohnke, Alexej Chernikov, Verena Bornwasser, Martin Koch, Sangam Chatterjee, Martin Eickhoff Journal of Applied Physics 110, 093513 (2011)
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Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires G. Jacopin, L. Rigutti, L. Largeau, F. Fortuna, F. Furtmayr, F. H. Julien, M. Eickhoff, M. Tchernycheva Journal of Applied Physics 110, 064313 (2011)
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GaN nanodiscs embedded in nanowires as optochemical transducers J. Teubert, P. Becker, F. Furtmayr, M. Eickhoff Nanotechnology 22 275505 (2011) DOI: 10.1088/0957-4484/22/27/275505
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Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes M. D. Neumann, C. Cobet, N. Esser, B. Laumer, T. A. Wassner, M. Eickhoff, M. Feneberg, R. Goldhahn Journal of Applied Physics 110, 013520 (2011)
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Carrier dynamics in (ZnMg)O alloy materials Alexej Chernikov, Swantje Horst, Martin Koch, Kerstin Volz, Sangam Chatterjee, Stephan W. Koch, Thomas A. Wassner, Bernhard Laumer, Martin Eickhoff Physica Status Solidi C 8, 1149 (2011)
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2010
Origin of energy dispersion in AlxGa1−xN/GaN nanowire quantum discs with low Al content Physical Review B 82, 235308 (2010) DOI: 10.1103/PhysRevB.82.235308
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Investigation of carrier dynamics in Zn1−xMgxO by time-resolved photoluminescence A. Chernikov, S. Horst, M. Koch, K. Volz, S. Chatterjee, S. W. Koch, T. A. Wassner, B. Laumer, M. Eickhoff Journal of Luminescence 130, 2256 (2010) DOI: 10.1016/j.jlumin.2010.06.030
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Electron spin resonance of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy T. A. Wassner, B. Laumer, M. Althammer, S. T. B. Goennenwein, M. Stutzmann, M. Eickhoff, M. S. Brandt Applied Physics Letters 97, 092102 (2010)
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Photocatalytic Cleavage of Self‐Assembled Organic Monolayers by UV‐Induced Charge Transfer from GaN Substrates John Howgate, Sebastian J. Schoell, Marco Hoeb, Wiebke Steins, Barbara Baur, Samira Hertrich, Bert Nickel, Ian D. Sharp, Martin Stutzmann, Martin Eickhoff Advanced Materials 22, 2632 (2010)
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P‐type doping of semipolar GaN(11-22) by plasma‐assisted molecular‐beam epitaxy A. Das, L. Lahourcade, J. Pernot, S. Valdueza‐Felip, P. Ruterana, A. Laufer, M. Eickhoff, E. Monroy Physica Status Solidi C 7, 1913 (2010)
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Optical characterization of AlGaN/GaN quantum disc structures in single nanowires L. Rigutti, F. Fortuna, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff Physica Status Solidi C 7, 2243 (2010)
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Photoluminescence polarization properties of single GaN nanowires containing AlxGa1−xN/GaN quantum discs Physical Review B 81, 045411 (2010) DOI: 10.1103/PhysRevB.81.045411
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2009
Mg doping and its effect on the semipolar GaN(112-2) growth kinetics L. Lahourcade, J. Pernot, A. Wirthmüller, M. P. Chauvat, P. Ruterana, A. Laufer, M. Eickhoff, E. Monroy Applied Physics Letters 95, 171908 (2009)
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Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage A. Bengoechea Encabo, J. Howgate, M. Stutzmann, M. Eickhoff, M. A. Sánchez-García, Sensors and Actuators B: Chemical 142, 304 (2009) DOI: 10.1016/j.snb.2009.07.016
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Gallium nitride electrodes for membrane-based electrochemical biosensors T. Schubert, G. Steinhoff, H.-G. von Ribbeck, M. Stutzmannn, M. Eickhoff, M. Tanaka, European Physical Journal E 30, 233 (2009) DOI: 10.1140/epje/i2009-10511-x
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Strain effects and phonon–plasmon coupled modes in Si‐doped AlN M. Gómez‐Gómez, A. Cros, M. Hermann, M. Stutzmann, M. Eickhoff Physica Status Solidi A 206, 1183 (2009)
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Analysis of polarization‐dependent photoreflectance studies for c ‐plane GaN films grown on a ‐plane sapphire Marcus Röppischer, Rüdiger Goldhahn, Carsten Buchheim, Florian Furtmayr, Thomas Wassner, Martin Eickhoff, Christoph Cobet, Norbert Esser Physica Status Solidi A 206, 773 (2009)
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Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking Jordi Arbiol, Sònia Estradé, Joan D Prades, Albert Cirera, Florian Furtmayr, Christoph Stark, Andreas Laufer, Martin Stutzmann, Martin Eickhoff, Mhairi H Gass, Andrew L Bleloch, Francesca Peiró, Joan R Morante Nanotechnology 20, 145704 (2009) DOI: 10.1088/0957-4484/20/14/145704
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GaN quantum dots as optical transducers for chemical sensors O. Weidemann, P. K. Kandaswamy, E. Monroy, G. Jegert, M. Stutzmann, M. Eickhoff Applied Physics Letters 94, 113108 (2009)
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Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy Thomas A. Wassner, Bernhard Laumer, Stefan Maier, Andreas Laufer, Bruno K. Meyer, Martin Stutzmann, Martin Eickhoff Journal of Applied Physics 105, 023505 (2009)
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GaN/AlN Axial Multi Quantum Well Nanowires for Optoelectronic Devices S. Conesa-Boj, J. Arbiol, F. Furtmayr, C. Stark, S. Schäfer, M. Stutzmann, M. Eickhoff, F. Peiro, J. R. Morante Proceedings of the 2009 Spanish Conference on Electron Devices DOI: 10.1109/SCED.2009.4800430
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2008
Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping Florian Furtmayr, Martin Vielemeyer, Martin Stutzmann, Jordi Arbiol, Sònia Estradé, Francesca Peirò, Joan Ramon Morante, Martin Eickhoff Journal of Applied Physics 104, 034309 (2008)
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Gas sensing properties of hydrogen-terminated diamond A. Helwig, G. Müller, J. A. Garrido, M. Eickhoff Sensors and Actuators B: Chemical 133, 156 (2008) DOI: 10.1016/j.snb.2008.02.007
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Functionalization of 6H-SiC surfaces with organosilanes S. J. Schoell, M. Hoeb, I. D. Sharp, W. Steins, M. Eickhoff, M. Stutzmann, M. S. Brandt Applied Physics Letters 92, 153301 (2008)
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The Surface Conductivity at the Diamond/Aqueous Electrolyte Interface Jose A. Garrido, Andreas Härtl, Markus Dankerl, Andreas Reitinger, Martin Eickhoff, Andreas Helwig, Gerhard Müller, Martin Stutzmann Journal of the American Chemical Society 130, 4177 (2008)
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Field Test of Water-Steam Separators for Direct Steam Generation in Parabolic Troughs Markus Eck, Holger Schmidt, Martin Eickhoff, Tobias Hirsch Journal of Solar Energy Engineering 130, 011002 (2007)
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A novel GaN‐based multiparameter sensor system for biochemical analysis B. Lübbers, G. Kittler, P. Ort, S. Linkohr, D. Wegener, B. Baur, M. Gebinoga, F. Weise, M. Eickhoff, S. Maroldt, A. Schober, O. Ambacher Physica Status Solidi C 5, 2361 (2007)
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Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy Florian Furtmayr, Martin Vielemeyer, Martin Stutzmann, Andreas Laufer, Bruno K. Meyer, Martin Eickhoff Journal of Applied Physics 104, 074309 (2008)
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2007
Dissociative Gas Sensing at Metal Oxide Surfaces Andreas Helwig, Gerhard Muller, Martin Eickhoff, Giorgio Sberveglieri IEEE Sensors Journal 7, 1675 (2007)
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Gas Sensing Interactions at Hydrogenated Diamond Surfaces Andreas Helwig, Gerhard Muller, Olaf Weidemann, Andreas Hartl, Jose Antonio Garrido, Martin Eickhoff IEEE Sensors Journal 7, 1349 (2007)
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Stark shift of interband transitions in AlN/GaN superlattices C. Buchheim, R. Goldhahn, A. T. Winzer, G. Gobsch, U. Rossow, D. Fuhrmann, A. Hangleiter, F. Furtmayr, M. Eickhoff Applied Physics Letters 90, 241906 (2007)
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Selective etching of AlInN/GaN heterostructures for MEMS technology E. Sillero, D. López-Romero, F. Calle, M. Eickhoff, J. F. Carlin, N. Grandjean, M. Ilegems Microelectronic Engineering 84, 1152 (2007) DOI: 10.1016/j.mee.2007.01.150
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Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron–hole interaction R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, M. Eickhoff Physica Status Solidi A 204, 447 (2007)
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GaN Quantum Dots as Optical Transducers in Field Effect Chemical Sensors O. Weidemann, G. Jegert, S. Birner, M. Stutzmann, M. Eickhoff Sensors, 2007 IEEE 1-3, 1175 (2007) DOI: 10.1109/ICSENS.2007.4388617
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Fully unstrained GaN on sacrificial AlN layers by nano‐heteroepitaxy K. Tonisch, V. Cimalla, F. Niebelschütz, H. Romanus, M. Eickhoff, O. Ambacher Physica Status Solidi C 4, 2248 (2007)
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Fabrication of freestanding GaN microstructures using AlN sacrificial layers E. Zaus, M. Hermann, M. Stutzmann, M. Eickhoff Physica Status Solidi Rapid Research Letters 1, R10 (2007)
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2006
Impact of silicon incorporation on the formation of structural defects in AlN M. Hermann, F. Furtmayr, F. M. Morales, O. Ambacher, M. Stutzmann, M. Eickhoff Journal of Applied Physics 100, 113531 (2006)
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Direct biofunctionalization of semiconductors: A survey Martin Stutzmann, Jose Antonio Garrido, Martin Eickhoff, Martin S. Brandt Physica Status Solidi A 203, 3424 (2006)
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Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors B. Baur, J. Howgate, H.-G. von Ribbeck, Y. Gawlina, V. Bandalo, G. Steinhoff, M. Stutzmann, M. Eickhoff Applied Physics Letters 89, 183901 (2006)
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Nearly stress-free substrates for GaN homoepitaxy M. Hermann, D. Gogova, D. Siche, M. Schmidbauer, B. Monemar, M. Stutzmann, M. Eickhoff Journal of Crystal Growth 293, 462 (2006) DOI: 10.1016/j.jcrysgro.2006.05.058
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Erratum: Recording of cell action potentials with AlGaN/GaN field-effect transistors [Appl. Phys. Lett. 86, 033901 (2005)] Georg Steinhoff, Barbara Baur, Günter Wrobel, Sven Ingebrandt, Andreas Offenhäusser, Armin Dadgar, Alois Krost, Martin Stutzmann, Martin Eickhoff Applied Physics Letters 89, 019901 (2006)
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New Materials for Chemical and Biosensors A. Lloyd Spetz, S. Nakagomi, H. Wingbrant, M. Andersson, A. Salomonsson, S. Roy, G. Wingqvist, I. Katardjiev, M. Eickhoff, K. Uvdal, R. Yakimova Materials and Manufacturing Processes 21, 253 (2006) DOI: 10.1080/10426910500464495
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Luminescence properties of highly Si-doped AlN E. Monroy, J. Zenneck, G. Cherkashinin, O. Ambacher, M. Hermann, M. Stutzmann, M. Eickhoff Applied Physics Letters 88, 071906 (2006)
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Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen A. T. Winzer, R. Goldhahn, G. Gobsch, A. Dadgar, A. Krost, O. Weidemann, M. Stutzmann, M. Eickhoff Applied Physics Letters 88, 024101 (2006)
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2005
Chemical functionalization of GaN and AlN surfaces B. Baur, G. Steinhoff, J. Hernando, O. Purrucker, M. Tanaka, B. Nickel, M. Stutzmann, M. Eickhoff Applied Physics Letters 87, 263901 (2005)
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Electrochemical stabilization of crystalline silicon with aromatic self‐assembled monolayers in aqueous electrolytes Murat Tutus, Oliver Purrucker, Klaus Adlkofer, Martin Eickhoff, Motomu Tanaka Physica Status Solidi B 242, 2838 (2005)
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Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy M. Hermann, F. Furtmayr, A. Bergmaier, G. Dollinger, M. Stutzmann, M. Eickhoff Applied Physics Letters 86, 192108 (2005)
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Determination of the polarization discontinuity at the AlGaN/GaN interface by electroreflectance spectroscopy A. T. Winzer, R. Goldhahn, G. Gobsch, A. Link, M. Eickhoff, U. Rossow, A. Hangleiter Applied Physics Letters 86, 181912 (2005)
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Mn-rich clusters in GaN: Hexagonal or cubic symmetry? G. Martínez-Criado, A. Somogyi, S. Ramos, J. Campo, R. Tucoulou, M. Salome, J. Susin, M. Hermann, M. Eickhoff, M. Stutzmann Applied Physics Letters 86, 131927 (2005)
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Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy O. Weidemann, E. Monroy, E. Hahn, M. Stutzmann, M. Eickhoff Applied Physics Letters 86, 083507 (2005)
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Recording of cell action potentials with AlGaN/GaN field-effect transistors Georg Steinhoff, Barbara Baur, Günter Wrobel, Sven Ingebrandt, Andreas Offenhäusser, Armin Dadgar, Alois Krost, Martin Stutzmann, Martin Eickhoff Applied Physics Letters 86, 033901 (2005)
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AlGaN/GaN Electrolyte-Gate Field-Effect Transistors as Transducers for Bioelectronic Devices Georg Steinhoff, Barbara Baur, Hans-Georg von Ribbeck, Günter Wrobel, Sven Ingebrandt, Andreas Offenhäusser, Martin Stutzmann, Martin Eickhoff Advances in Solid State Physics 45, 363 (2005)
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Phase transition by Mg doping of N‐face polarity GaN E. Sarigiannidou, E. Monroy, M. Hermann, T. Andreev, P. Holliger, S. Monnoye, H. Mank, B. Daudin, M. Eickhoff Physica Status Solidi C 2, 2216 (2005)
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2004
Structural and interface properties of an AlN diamond ultraviolet light emitting diode C. R. Miskys, J. A. Garrido, M. Hermann, M. Eickhoff, C. E. Nebel, M. Stutzmann, G. Vogg Applied Physics Letters 85, 3699 (2004)
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Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende E. Monroy, M. Hermann, E. Sarigiannidou, T. Andreev, P. Holliger, S. Monnoye, H. Mank, B. Daudin, M. Eickhoff Journal of Applied Physics 96, 3709 (2004)
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Anisotropic propagation of surface acoustic waves on nitride layers J. Pedrós, F. Calle, J. Grajal, R. J. Jiménez Riobóo, C. Prieto, J. L. Pau, J. Pereiro, M. Hermann, M. Eickhoff, Z. Bougrioua Superlattices and Microstructures 36, 815 (2004) DOI: 10.1016/j.spmi.2004.09.044
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Electron injection-induced effects in Mn-doped GaN William Burdett, Olena Lopatiuk, Leonid Chernyak, Martin Hermann, Martin Stutzmann, Martin Eickhoff Journal of Applied Physics 96, 3556 (2004)
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Piezoresistive properties of single crystalline, polycrystalline, and nanocrystalline n-type 3C-SiC M. Eickhoff, M. Möller, G. Kroetz, M. Stutzmann Journal of Applied Physics 96, 2872 (2004)
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Influence of crystal defects on the piezoresistive properties of 3C–SiC M. Eickhoff, M. Stutzmann Journal of Applied Physics 96, 2878 (2004)
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High quality heteroepitaxial AlN films on diamond G. Vogg, C. R. Miskys, J. A. Garrido, M. Hermann, M. Eickhoff, M. Stutzmann Journal of Applied Physics 96, 895 (2004)
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Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition M. Eickhoff, H. Möller, J. Stoemenos, S. Zappe, G. Kroetz, M. Stutzmann Journal of Applied Physics 95, 7908 (2004)
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Direct Observation of Mn Clusters in GaN by X-ray Scanning Microscopy Gema Martínez-Criado, Andrea Somogyi, Martin Hermann, Martin Eickhoff, Martin Stutzmann Japanese Journal of Applied Physics 43, L695 (2004)
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Photoreflectance studies of (Al)Ga- and N-face AlGaN/GaN heterostructures C. Buchheim, A. T. Winzer, R. Goldhahn, G. Gobsch, O. Ambacher, A. Link, M. Eickhoff, M. Stutzmann Thin Solid Films 450, 155 (2004) DOI: 10.1016/j.tsf.2003.10.062
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Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, M. Eickhoff Thin Solid Films 450, 163 (2004) DOI: 10.1016/j.tsf.2003.10.064
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Improved 3C-SiC Films Epitaxially Grown on Si by Flash Lamp Processing J. Stoemenos, D. Panknin, M. Eickhoff, V. Heera, W. Skorupa Journal of the Electrochemical Society 151, G136 (2002)
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2003
AlxGa1–xN—A New Material System for Biosensors G. Steinhoff, O. Purrucker, M. Tanaka, M. Stutzmann, M. Eickhoff Advanced Functional Materials 13, 841 (2003)
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AlN/Diamond np-junctions Christoph E. Nebel, Claudio R. Miskys, Jose, A. Garrido, Martin Hermann, Oliver Ambacher, Martin Eickhoff, Martin Stutzmann Diamond and Related Materials 12, 1873 (2003) DOI: 10.1016/S0925-9635(03)00313-3
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Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative x-ray photoelectron spectroscopy study A. Lehner, G. Steinhoff, M. S. Brandt, M. Eickhoff, M. Stutzmann Journal of Applied Physics 94, 2289 (2003)
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Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes O. Weidemann, M. Hermann, G. Steinhoff, H. Wingbrant, A. Lloyd Spetz, M. Stutzmann, M. Eickhoff Applied Physics Letters 83, 773 (2003)
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pH response of GaN surfaces and its application for pH-sensitive field-effect transistors G. Steinhoff, M. Hermann, W. J. Schaff, L. F. Eastman, M. Stutzmann , M. Eickhoff Applied Physics Letters 83, 177 (2003)
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Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, U. Karrer, M. Eickhoff Applied Physics Letters 82, 1712 (2003)
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AlN/diamond heterojunction diodes C. R. Miskys, J. A. Garrido, C. E. Nebel, M. Hermann, O. Ambacher, M. Eickhoff, M. Stutzmann Applied Physics Letters 82, 290 (2003)
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Hydrosilylation of silicon surfaces: Crystalline versus amorphous A. Lehner, G. Steinhoff, M. S. Brandt, M. Eickhoff, M. Stutzmann Materials Research Society Symposium Proceedings 762, 473 (2003)
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Electroreflectance and photoreflectance studies of electric fields in Pt/GaN Schottky diodes and AlGaN/GaN heterostructures S. Shokhovets, R. Goldhahn, G. Gobsch, O. Ambacher, I. P. Smorchkova, J. S. Speck, U. Mishra, A. Link, M. Hermann, M. Eickhoff Materials Research Society Symposium Proceedings 743, 279 (2003)
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Two-dimensional charge carrier systems for chemical sensors: AlGaN/GaN and diamond M. Stutzmann, J. A. Garrido, M. Eickhoff Proceedings of the IEEE Sensors 1-2, 1153 (2003) DOI: 10.1109/ICSENS.2003.1279125
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2002
Gas sensitive GaN/AlGaN-heterostructures J. Schalwig, G. Müller, M. Eickhoff, O. Ambacher, M. Stutzmann Sensors and Actuators B: Chemical 87, 425 (2002) DOI: 10.1016/S0925-4005(02)00292-7
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Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdú, F. J. Sánchez, M. T. Montojo, M. Eickhoff, F. Omnès, Z. Bougrioua, I. Moerman Semiconductor Science and Technology 17, L47 (2002) DOI: 10.1088/0268-1242/17/9/103
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Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT) Ralph Neuberger, Gerhard Müller, Martin Eickhoff, Oliver Ambacher, Martin Stutzmann Materials Science and Engineering: B 93, 143 (2002) DOI: 10.1016/S0921-5107(02)00053-3
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Nanotechnology for SAW devices on AlN epilayers T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, C. Prieto Materials Science and Engineering: B 93, 154 (2002) DOI: 10.1016/S0921-5107(02)00022-3
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Group III-nitride-based gas sensors for combustion monitoring J. Schalwig, G. Müller, M. Eickhoff, O. Ambacher, M. Stutzmann Materials Science and Engineering: B 93, 207 (2002) DOI: 10.1016/S0921-5107(02)00050-8
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Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, L. F. Eastman Journal of Physics: Condensed Matter 14, 3399 (2002) DOI: 10.1088/0953-8984/14/13/302
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Thermoresistive and Piezoresistive Properties of Wurtzite N–GaN S. Mingiacchi, P. Lugli, A. Bonfiglio, G. Conte, M. Eickhoff, O. Ambacher, A. Rizzi, A. Passaseo, P. Visconti, R. Cingolani Physica Status Solidi A 190, 281 (2002) DOI: 10.1002/1521-396X(200203)190:1%3C281::AID-PSSA281%3E3.0.CO;2-U
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GaN-based heterostructures for sensor applications M. Stutzmann, G. Steinhoff, M. Eickhoff, O. Ambacher, C. E. Nebel, J. Schalwig, R. Neuberger, G. Müller Diamond and Related Materials 11, 886 (2002) DOI: 10.1016/S0925-9635(02)00026-2
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Hydrogen response mechanism of Pt–GaN Schottky diodes J. Schalwig, G. Müller, U. Karrer, M. Eickhoff, O. Ambacher, M. Stutzmann, L. Görgens, G. Dollinger Applied Physics Letters 80, 1222 (2002)
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Group III-nitride devices for field effect based gas detection M. Eickhoff, J. Schalwig, O. Weidemann, L. Gorgens, G. Muller, M. Stutzmann IEEE Semiconducting and Semi-Insulating Materials Conference, 64 (2002)
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High frequency SAW devices on AlGaN: fabrication, characterization and integration with optoelectronics T. Palacios, F. Calle, J. Grajal, E. Monroy, M. Eickhoff, O. Ambacher, F. Omnes Proceedings of the IEEE Ultrasonics Symposium 1-2, 57 (2002)
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Novel sensor applications of group-III nitrides M. Eickhoff, O. Ambacher, G. Steinhoff, J. Schalwig, R. Neuberger, T. Palacios, E. Monroy, F. Calle, G. Muller, M. Stutzmann Materials Research Society Symposium Proceedings 693, 781 (2002)
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High-resolution XRD investigations of the strain reduction in 3C-SiC thin films grown on Si(111) substrates P. Weih, V. Cimalla, C. Forster, J. Pezoldt, T. Stauden, L. Spiess, H. Romanus, M. Hermann, M. Eickhoff, P. Masri, O. Ambacher Materials Science Forum 433-4, 233 (2002)
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Electronics and sensors based on pyroelectrc AlGaN/GaN heterostructures O. Ambacher, M. Eickhoff, G. Steinhoff, M. Hermann, L. Gorgens, V. Weiss, B. Baur, M. Stutzmann, R. Neuberger, J. Schalwig, G. Muller, V. Tilak, B. Green, B. Schaff, L. F. Eastman, F. Bernardini, V. Fiorentini Electrochemical Society Series 2002, 335 (2002)
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2001
The beneficial role of flash lamp annealing on the epitaxial growth of the 3C–SiC on Si D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, M. Voelskow, W. Skorupa Applied Surface Science 184, 377 (2001) DOI: 10.1016/S0169-4332(01)00521-9
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Playing with Polarity M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, R. D. Grober Physica Status Solidi B 228, 505 (2001) DOI: 10.1002/1521-3951(200111)228:2<505::AID-PSSB505>3.0.CO;2-U
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Wetting Behaviour of GaN Surfaces with Ga‐ or N‐Face Polarity M. Eickhoff, R. Neuberger, G. Steinhoff, O. Ambacher, G. Müller, M. Stutzmann Physica Status Solidi B 228, 519 (2001) DOI: 10.1002/1521-3951(200111)228:2<519::AID-PSSB519>3.0.CO;2-A
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Etching characteristics and mechanical properties of a-SiC:H thin films U. Schmid, M. Eickhoff, Ch. Richter, G. Krötz, D. Schmitt-Landsiedel Sensors and Actuators A: Physical 94, 87 (2001) DOI: 10.1016/S0924-4247(01)00691-4
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Piezoresistivity of AlxGa1−xN layers and AlxGa1−xN/GaN heterostructures M. Eickhoff, O. Ambacher, G. Krötz, M. Stutzmann Journal of Applied Physics 90, 3383 (2001)
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A highly stable SiC based microhotplate NO2 gas-sensor F. Solzbacher, C. Imawan, H. Steffes, E. Obermeier, M. Eickhoff Sensors and Actuators B: Chemical 78, 216 (2001) DOI: 10.1016/S0925-4005(01)00815-2
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A new SiC/HfB2 based low power gas sensor F. Solzbacher, C. Imawan, H. Steffes, E. Obermeier, M. Eickhoff Sensors and Actuators B: Chemical 77, 111 (2001) DOI: 10.1016/S0925-4005(01)00681-5
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Oxidation Dependence on Defect Density in 3C-SiC Films M. Eickhoff, N. Vouroutzis, A. Nielsen, G. Krötz, J. Stoemenos Journal of the Electrochemical Society 148, G336 (2001)
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Suppression of Si Cavities at the SiC/Si Interface during Epitaxial Growth of 3C-SiC on Silicon-on-Insulator H. Möller, G. Krötz, M. Eickhoff, A. Nielsen, V. Papaioannou, J. Stoemenos Journal of the Electrochemical Society 148, G16 (2001)
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Strain and strain relaxation in SOI materials J. Camassel, N. Planes, L. Falkovski, H. Moller, M. Eickhoff, G. Krotz Electrochemical Society Series 99, 40 (2001)
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Improvement of the 3C-SiC/Si interface by flash lamp annealing D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, N. Vouroutzis, G. Krötz, Wolfgang Skorupa Materials Science Forum 353, 151 (2001) DOI: 10.4028/www.scientific.net/MSF.353-356.151
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Selective Deposition of 3C-SiC Epitaxially Grown on SOI Subtrates M. Eickhoff, S. Zappe, A. Nielsen, G. Krötz, E. Obermeier, N. Vouroutzis, J. Stoemenos Materials Science Forum 353, 175 (2001) DOI: 10.4028/www.scientific.net/MSF.353-356.175
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Dependence of Wet Oxidation on the Defect Density in 3C-SiC M. Eickhoff, N. Vouroutzis, A. Nielsen, G. Krötz, J. Stoemenos Materials Science Forum 353, 663 (2001) DOI: 10.4028/www.scientific.net/MSF.353-356.663
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High Temperature 10 Bar Pressure Sensor Based on 3C-SiC/SOI for Turbine Control Applications S. Zappe, J. Franklin, E. Obermeier, M. Eickhoff, H. Möller, G. Krötz, C. Rougeot, O. Lefort, J. Stoemenos Materials Science Forum 353, 753 (2001) DOI: 10.4028/www.scientific.net/MSF.353-356.753
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2000
Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si3N4/SiO2 System S. Zappe, H. Möller, G. Krötz, M. Eickhoff, Wolfgang Skorupa, E. Obermeier, J. Stoemenos Materials Science Forum 338, 529 (2000) DOI: 10.4028/www.scientific.net/MSF.338-342.529
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SOL Thinning Effects on 3C-SiC on SOI N. Planes, H. Möller, Jean Camassel, Y. Stoimenos, L. Falkovski, M. Eickhoff, G. Krötz Materials Science Forum 338, 301 (2000) DOI: 10.4028/www.scientific.net/MSF.338-342.301
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1999 and before
Heteroepitaxial growth of 3C-SiC on SOI for sensor applications G. Krötz, H. Möller, M. Eickhoff, S. Zappe, R. Ziermann, E. Obermeier, J. Stoemenos Materials Science and Engineering: B 61, 516 (1999) DOI: 10.1016/S0921-5107(98)00464-4
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The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD V. Papaioannou, H. Möller, M. Rapp, L. Vogelmeier, M. Eickhoff, G. Krötz, J. Stoemenos Materials Science and Engineering: B 61, 539 (1999) DOI: 10.1016/S0921-5107(98)00469-3
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Influence of the silicon overlayer thickness of SOI unibond substrates on β-SIC heteroepitaxy H. Möller, M. Eickhoff, L. Vogelmeier, M. Rapp, G. Krötz, V. Papaioannou, J. Stoemenos Materials Science and Engineering: B 61, 567 (1999) DOI: 10.1016/S0921-5107(98)00475-9
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High temperature piezoresistive β-SiC-on-SOI pressure sensor with on chip SiC thermistor R. Ziermann, J. von Berg, E. Obermeier, F. Wischmeyer, E. Niemann, H. Möller, M. Eickhoff, G. Krötz Materials Science and Engineering: B 61, 576 (1999) DOI: 10.1016/S0921-5107(98)00477-2
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SOL thickness dependence of residual strain in SOI material J. Camassel, N. Planes, L. Falkovsky, H. Moller, M. Eickhoff, G. Krotz Electronic Letters 35, 1284 (1999)
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Selective growth of high-quality 3C-SiC using a SiO2 sacrificial-layer technique M. Eickhoff, H. Möller, M. Rapp, G. Kroetz Thin Solid Films 345, 197 (1999) DOI: 10.1016/S0040-6090(99)00233-3
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A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates M. Eickhoff, H. Möller, G. Kroetz, J. v. Berg, R. Ziermann Sensors and Actuators A: Physical 74, 56 (1999) DOI: 10.1016/S0924-4247(98)00302-1
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Silicon compatible materials for harsh environment sensors Gerhard H. Kroetz, Martin H. Eickhoff, Helmut Moeller Sensors and Actuators A: Physical 74, 182 (1999) DOI: 10.1016/S0924-4247(98)00296-9
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High quality β-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step H. Möller, M. Eickhoff, M. Rapp, H. W. Grueninger, G. Krötz, Applied Physics A 68, 461 (1999)
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Measurement of the cylinder pressure in combustion engines with a piezoresistive /spl beta/-SiC-on-SOI pressure sensor J. von Berg, R. Ziermann, W. Reichert, E. Obermeier, M. Eickhoff, G. Krotz, U. Thoma, C. Cavalloni, J. P. Nendza IEEE 1998 Fourth International High Temperature Electronics Conference, 245 (1998) DOI: 10.1109/HITEC.1998.676796
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High Temperature Piezoresistive β-SiC-on-SOI Pressure Sensor for Combustion Engines J. von Berg, R. Ziermann, W. Reichert, E. Obermeier, M. Eickhoff, G. Krötz, U. Thoma, Th. Boltshauser, C. Cavalloni, J. P. Nendza Materials Science Forum 264, 1101 (1998) DOI: 10.4028/www.scientific.net/MSF.264-268.1101
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Rapid plasma etching of cubic SiC using NF3/O2 gas mixtures Christoph Richter, Klaus Espertshuber, Christoph Wagner, Martin Eickhoff, Gerhard Krötz Materials Science and Engineering: B 46, 160 (1997) DOI: 10.1016/S0921-5107(96)01969-1
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A high temperature pressure sensor with beta-SiC piezoresistors on SOI substrates R. Ziermann, J. von Berg, W. Reichert, E. Obermeier, M. Eickhoff, G. Krotz IEEE Transducers 1-2, 1411 (1997)
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The influence of crystal quality on the piezoresistive effect of beta-SiC between RT and 450 degrees C measured by using microstructures J. Strass, M. Eickhoff, G. Kroetz IEEE Transducers 1-2, 1439 (1997)
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