Education Research Group Falta

We will study the impact of the roughness of the Ru surface on the nucleation of Ga2O3.

The Growth of the samples will be performed using radio frequency (RF) sputtering of Ru and Ga2O3 .

The surface roughness of the Ru films will be tailored by annealing at different temperatures.

Ga2O3 films will be grown at different temperatures in order to study the nucleation process in detail.

For the characterization of the growth steps various techniques will be applied, such as scanning microscopy (AFM/STM), low energy electron diffraction (LEED) and x-ray photoemission spectroscopy (XPS).

Aim: Establishing a reliable design for RS switching devices

In old design, the conductive tips could easily scratch the contact’s surface, destroying the device easily. This resulted in low yield and problems with the repeatability of measurements.

The samples will be prepared using sputter deposition of Ruthenium, Sapphire and Aluminum in a cross-bar geometry, checked by low-energy electron diffraction (LEED) and scanning electron microscopy (SEM) as well as atomic force microscopy.

Electrical measurements will provide insight into the resistive switching characteristics.

The adsorption of Gallium on the Ruthenium (0001) surface will be studied using high-resolution low-energy electron diffraction (SPA-LEED) and microscopy (LEEM and AFM) and electron spectroscopy.

The aim is to establish an understanding of the evolution of the surface structure, morphology and the implications for surface chemistry, e.g. in catalysis.