Instrument Database

Electron Microscopy

Focused Ion Beam

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General information

  • Investigation area
  • Techniques
    Scanning Electron Microscopy
  • Manufacturer
    Zeiss
  • Fabrication year
    2013
  • Measured quantity
    layer thickness; surface morphology
  • Main application
    Thickness measurement, material deposition, ion beam etching, e-beam lithography

Instrument specification

  • Technical aspects

    Canion FIB column

    Gallium ion source with a long service life of 1500 µAh
    Optimum lateral resolution < 7.0 nm at 30 KV, energy range 1 kV - 30 kV
    Beam current 1 pA - 50 nA, selectable via high-precision motorised aperture changer

    (installed at Auriga 40 from Zeiss - FIBSEM -: for fine processing, the SEM has been extended to include an FIB, in which samples made of polymer, semiconductor material or metal can be structured with micrometre precision using a gallium ion beam.)
     

Contact

Instrument location

  • Building
    NW1
  • Room
    O0080
  • Faculty
    Fachbereich 1
  • Institute University
    IMSAS
Updated by: MAPEX