Instrument Database
Electron Microscopy
Focused Ion Beam

General information
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Investigation area
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TechniquesScanning Electron Microscopy
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ManufacturerZeiss
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Fabrication year2013
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Measured quantitylayer thickness; surface morphology
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Main applicationThickness measurement, material deposition, ion beam etching, e-beam lithography
Instrument specification
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Technical aspects
Canion FIB column
Gallium ion source with a long service life of 1500 µAh
Optimum lateral resolution < 7.0 nm at 30 KV, energy range 1 kV - 30 kV
Beam current 1 pA - 50 nA, selectable via high-precision motorised aperture changer(installed at Auriga 40 from Zeiss - FIBSEM -: for fine processing, the SEM has been extended to include an FIB, in which samples made of polymer, semiconductor material or metal can be structured with micrometre precision using a gallium ion beam.)
Contact
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Application scientistReiner Klattenhoff
, BIAS
FZB / HB 1080
Phone number 421 218 58073
klattenhoffprotect me ?!biasprotect me ?!.de -
Eva-Maria Meyer
Fachbereich 1
NW1 / O 01120
Phone number 421 218 62617
emeyerprotect me ?!imsas.uni-bremenprotect me ?!.de -
Principal investigatorBergmann, Ralf
Björn Lüssem
Instrument location
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BuildingNW1
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RoomO0080
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FacultyFachbereich 1
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Institute UniversityIMSAS