PD Dr. A. Pawlis (FZ Jülich): Modern Device Concepts based on novel aspects in the MBE of classic wide gap II/VI semiconductors
shortly presenting a novel approach to implement hybrid nanowire structures composed of a III/V semiconductor core (GaAs) surrounded by a II/VI semiconductor shell (ZnSe). Here we established a MBE growth technique [...] [3] A. Pawlis, G. Mussler, C. Krause, B. Bennemann, U. Breuer, D. Grützmacher, ACS Appl. Electron. Mater. 1, 44 (2019). [4] F. Heisterkamp, E.A. Zhukov, A. Greilich, D.R. Yakovlev, V.L. Korenev, A. Pawlis [...] Phys. Rev B 91, 235432 (2015). [5] N. E. Kopteva, E. Kirstein, E.A. Zhukov, M. Hussain, A.S. Bhatti, A. Pawlis, D.R. Yakovlev, M. Bayer, A. Greilich, Phys. Rev B 100, 205415 (2019). [6] J. Janßen, F. Hartz