Veröffentlichungen
2019 2019 FelixHoffmann, Evaluation of the V SD -method for temperature estimation during power cycling of SiC-MOSFETs, IET Power Electronics 18 (15), 3903-3909 N. Kaminski, S. Rugen, F. Hoffmann, (invited) [...] M Hanf, JH Peters, F Hoffmann, N Kaminski Materials Science Forum 1092, 171-177 Reliability of SiC MOSFET Power Modules under Consecutive H3TRB and Power Cycling Stress F Hoffmann, S Schmitt, N Kaminski [...] Previous Operation F Hoffmann, P Friedrichs, N Kaminski PCIM Europe digital days 2020; International Exhibition and Conference for … H3TRB Test on 6.5 kV SiC-JBS Diodes F Hoffmann, A Mihaila, V Soler,